Plasma-polymerized hexamethyldisilazane treated by nitrogen plasma immersion ion implantation technique
نویسندگان
چکیده
منابع مشابه
Semiconductor applications of plasma immersion ion implantation
Plasma immersion ion implantation (PIII) is an established technique in certain niche microelectronics applications such as the synthesis of silicon-oninsulator. In other applications such as shallow junction formation by plasma doping, trench doping, and fabrication of blue light emitting materials, PIII has unique advantages over conventional techniques and may be the technique of choice in t...
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A plasma treatment system (200) for implantation with a novel susceptor with a perforated shield (201). The system (200) has a variety of elements such as a chamber in which a plasma is generated in the chamber. The system (200) also has a susceptor disposed in the chamber to support a silicon substrate, which has a surface. The perforated shield (201) draws ions from the implantation toward an...
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Nitrogen Plasma Immersion Ion Implantation (PIII) has been used to modify the surface chemical structure of Ultra High Molecular Weight Polyethylene (UHMWPE). Grinding and polishing processes based on abrasive papers and alumina pastes have been evaluated with regard to their results on the improvement of polymer surface roughness, which has shown to be of crucial importance for hardness charac...
متن کاملInvestigation of cytocompatibility of surface-treated cellulose nitrate films by using plasma immersion ion implantation
The alpha-particle sensitive colorless cellulose nitrate films (commercially available as LR 115 films from DOSIRAD, France) have been proposed as cell-culture substrates for alpha-particle radiobiological experiments. Cytocompatibility of the substrate is a key factor to the success of such experiments. The present work aims to investigate the cytocompatibility of surface-treated cellulose nit...
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A plasma treatment system (200) for implantation with a novel susceptor with shielding (203). The system (200) has a variety of elements such as a chamber in which a plasma is generated in the chamber. The system (200) also has a susceptor disposed in the chamber to support a substrate. A shield (203) is disposed adjacent to the susceptor for blocking impurities that may possibly be introduced ...
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ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2009
ISSN: 1742-6596
DOI: 10.1088/1742-6596/167/1/012055